Electrical Properties of CZO Films Prepared by Ultrasonic Spray Pyrolysis
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چکیده
منابع مشابه
Electrical Properties of CZO Films Prepared by Ultrasonic Spray Pyrolysis
CuZnO (CZO) films have attracted increasing amounts of attention due to their promising potential applications in semiconductor devices. ZnO shows n-type conductivity, and attempts have been made to dope several elements in ZnO to improve the electrical properties. This study investigated the electrical property transitions of CZO films and determined the copper concentration at which the condu...
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The In-doped vanadium pentoxide nanostructures with different doping levels including 0, 10, 20 and 30 at.% were prepared by the spray pyrolysis technique. The prepared thin films were characterized by the x-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results revealed that the films were crystalline in tetragonal phase. Increasing the In-doping level made the structure...
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New, thermally robust meso- and macroporous carbon powders were prepared by ultrasonic spray pyrolysis (USP) of aqueous solutions using an inexpensive high-frequency ultrasound generator from a household humidifier. We choose our molecular precursors rationally, so that the expected decomposition pathways produce only remnant carbon atoms. Specifically, our rational design criterion led to halo...
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Calciumhydroxyapatite thin films have been prepared by ultrasonic spray pyrolysis deposition on titanium substrate. The surface morphologies of the films formed at different deposition times were analysed by using SEM. The mechanism of the films formation was investigated in relation to the observed film morphology during the first stages of its formation, as well as to its consolidation to the...
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In this research, zinc oxide thin films with gallium impurity have been deposited using the spray pyrolysis technique. The structural and optical properties of these films are investigated as a function of gallium doping concentrations. The ZnO and ZnO:Ga films grown at a substrate temperature of 350 ºC with gallium doping concentrations from 1.0 to 5.0.%. The XRD analysis indicated that ZnO f...
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ژورنال
عنوان ژورنال: Materials
سال: 2014
ISSN: 1996-1944
DOI: 10.3390/ma7117304